Temperature Dependence and Reflection of Coherent Acoustic Phonons in InGaN Multiple Quantum Wells

2001 ◽  
Vol 228 (1) ◽  
pp. 85-89 ◽  
Author(s):  
�. �zg�r ◽  
C.-W. Lee ◽  
H.O. Everitt
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Acoustic Phonons ◽  
Coherent Acoustic Phonons

scholarly journals Narrow-band detection of propagating coherent acoustic phonons in piezoelectric InGaN∕GaN multiple-quantum wells

2007 ◽  
Vol 91 (13) ◽  
pp. 133101 ◽  
Author(s):  
Cheng-Ying Chen ◽  
Yu-Chieh Wen ◽  
Hung-Ping Chen ◽  
Tzu-Ming Liu ◽  
Chang-Chi Pan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Narrow Band ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Acoustic Phonons ◽  
Coherent Acoustic Phonons

Efficient generation of coherent acoustic phonons in (111) InGaAs∕GaAs multiple quantum wells through piezoelectric effects

2007 ◽  
Vol 90 (17) ◽  
pp. 172102 ◽  
Author(s):  
Yu-Chieh Wen ◽  
Li-Chang Chou ◽  
Hao-Hsiung Lin ◽  
Vitalyi Gusev ◽  
Kung-Hsuan Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Acoustic Phonons ◽  
Efficient Generation ◽  
Piezoelectric Effects ◽  
Coherent Acoustic Phonons

Enhancement of coherent acoustic phonons in InGaN multiple quantum wells

2015 ◽  
Author(s):  
Shopan D. Hafiz ◽  
Fan Zhang ◽  
Morteza Monavarian ◽  
Vitaliy Avrutin ◽  
Hadis Morkoç ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Acoustic Phonons ◽  
Coherent Acoustic Phonons

Temperature dependence of photoreflectance in GaAs-AlGaAs multiple quantum wells

1986 ◽  
Vol 174 (1-3) ◽  
pp. 206-210 ◽  
Author(s):  
O.J. Glembocki ◽  
B.V. Shanabrook ◽  
W.T. Beard
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Temperature Dependence of Cathodoluminescence From InxGa1-xAs/GaAs Multiple Quantum Wells

1995 ◽  
Vol 379 ◽  
Author(s):  
K. Rammohan ◽  
D.H. Rich ◽  
A. Larsson
Keyword(s):  
Activation Energy ◽  
Quantum Wells ◽  
Temperature Dependence ◽  
Spatial Variations ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Nonradiative Recombination ◽  
Intensity Dependence ◽  
Thermally Activated

ABSTRACTThe temperature dependence of the cathodoluminescence (CL) originating from In0.21Ga0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. The CL intensity exhibits an Arrenhius-type dependence on temperature (T), characterized by two different activation energies. The spatial variations in activation energy caused by the presence of interfacial misfit dislocations is examined. The CL intensity dependence on temperature for T ≲ 150 K is controlled by thermally activated nonradiative recombination. For T ≳ 150 K the decrease in CL intensity is largely influenced by thermal re-emission of carriers out of the quantum wells.

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